ANN/THE KOREA HERALD – At Samsung Memory Tech Day, Samsung Electronics introduced its latest chip technologies and products, with a focus on playing a significant role in supporting hyperscale artificial intelligence (AI) models.
Themed ‘Memory Reimagined,’ approximately 600 participants, including technicians, analysts and industry experts, gathered at this year’s Memory Tech Day to explore Samsung’s advancements in cloud computing, edge devices, and automotive technologies.
The tech giant unveiled its latest memory solutions, including the new fifth-generation HBM3e memory called Shinebolt; LPDDR package-based module LPDDR5X CAMM2 solutions and detachable AutoSSD that can be used through storage virtualisation.
The Shinebolt provides high performance of up to 9.8 gigabits per second per data input and output pin, which can process over 1.2 terabytes (TB) per second. Samsung implemented high-level stacking by optimising non-conductive film technology by filling gaps between chips.
Samsung’s industry-first 7.5Gbps LPDDR5X CAMM2 also captured attendees’ attention at the event.
The chip threatens to be a game-changer in the next-generation PC and laptop DRAM market. To achieve the number one position in the memory market by 2025, it also introduced its Detachable AutoSSD, which supports continuous read speeds of up to 6,500 megabytes per second and provides 4TB of capacity. “The era of hyperscale AI models is a point where opportunities for technological innovation and growth meet together. It will be a time of challenge as well as greater leaps for the industry players,” Lee Jung-bae said.
“We will continue to lead the memory market by providing expanded solutions that overcome limits through infinite imagination and bold challenges, alongside close cooperation with customers and partners,” he said, stressing the firm will introduce new structures and materials to overcome the challenges faced in the era of hyperscale AI models.
Samsung, which began mass production of 12-nano DRAM in May, announced that it was developing the next-generation 11-nano DRAM to achieve the industry’s highest level of integration.
